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| SI1025X New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) -60 rDS(on) (W) 4 @ VGS = -10 V VGS(th) (V) -1 to -3.0 ID (mA) -500 FEATURES D D D D D D D High-Side Switching Low On-Resistance: 4 Low Threshold: -2 V (typ) Fast Switching Speed: 20 ns (typ) Low Input Capacitance: 23 pF (typ) Miniature Package Gate-Source ESD Protection BENEFITS D D D D D D Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer Small Board Area APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid-State Relays SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: D D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Currentb Continuous Source Current (diode conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71433 S-03518--Rev. A, 23-Apr-01 www.vishay.com TA = 25_C TA = 85_C PD TJ, Tstg ESD TA = 25_C TA = 85_C ID IDM IS -450 280 145 -55 to 150 2000 Symbol VDS VGS 5 secs -60 "20 -200 -145 -650 Steady State Unit V -190 -135 mA -380 250 130 mW _C V 1 SI1025X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -0.25 mA VDS = 0 V, VGS = "10 V VDS = 0 V, VGS = "5 V VDS = -50 V, VGS = 0 V VDS = -50 V, VGS = 0 V, TJ = 85_C VDS = -10 V, VGS = -4.5 V VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -25 mA Drain-Source On-Resistancea rDS(on) VGS = -10 V, ID = -500 mA VGS = -10 V, ID = -500 mA, TJ = 125_C Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -100 mA IS = -200 mA, VGS = 0 V 100 -1.4 -50 -600 8 4 6 mS V W mA -60 V -1 -3.0 "200 "100 -25 -250 nA Symbol Test Condition Min Typ Max Unit Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -25 V, VGS = 0 V, f = 1 MHz VDS = -30 V, VGS = -15 V, ID ^ -500 mA 1.7 0.26 0.46 23 10 5 pF nC Switchingb, c Turn-On Time Turn-Off Time tON tOFF VDD = -25 V, RL = 150 W ID ^ -165 mA, VGEN = -10 V RG = 10 W 20 35 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71433 S-03518--Rev. A, 23-Apr-01 SI1025X New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) I D - Drain Current (mA) 8V 900 25_C 125_C 600 1200 TJ = -55_C Vishay Siliconix Transfer Characteristics 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 20 40 VGS = 0 V Capacitance r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) Gate Charge 15 V GS - Gate-to-Source Voltage (V) ID = 500 mA 12 VDS = 30 V VDS = 48 V 9 r DS(on) - On-Resistance ( W ) (Normalized) 1.5 1.8 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 1.2 VGS = 4.5 V @ 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71433 S-03518--Rev. A, 23-Apr-01 www.vishay.com 3 SI1025X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 VGS = 0 V 8 100 TJ = 125_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) ID = 500 mA 10 On-Resistance vs. Gate-Source Voltage 6 4 ID = 200 mA 2 10 TJ = 25_C TJ = -55_C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 0.2 0.1 -0.0 -0.1 -0.2 -0.3 -50 ID = 250 mA -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71433 S-03518--Rev. A, 23-Apr-01 |
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